NTY100N10
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain ? to ? source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (T C ) of 25 ° C.
Peak repetitive pulsed power limits are determined by
using the thermal response data in conjunction with the
procedures discussed in AN569, “Transient Thermal
Resistance ? General Data and Its Use.”
Switching between the off ? state and the on ? state may
traverse any load line provided neither rated peak current
(I DM ) nor rated voltage (V DSS ) is exceeded and the
transition time (t r ,t f ) do not exceed 10 m s. In addition the
total power averaged over a complete switching cycle must
not exceed (T J(MAX) ? T C )/(R q JC ).
A Power MOSFET designated E ? FET can be safely used
in switching circuits with unclamped inductive loads. For
1000
reliable operation, the stored energy from circuit
inductance dissipated in the transistor while in avalanche
must be less than the rated limit and adjusted for operating
conditions differing from those specified. Although
industry practice is to rate in terms of energy, avalanche
energy capability is not a constant. The energy rating
decreases non ? linearly with an increase of peak current in
avalanche and peak junction temperature.
Although many E ? FETs can withstand the stress of
drain ? to ? source avalanche at currents up to rated pulsed
current (I DM ), the energy rating is specified at rated
continuous current (I D ), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12).
Maximum energy at currents below rated continuous I D can
safely be assumed to equal the values indicated.
500
I D = 100 A
100
10
R DS(on) Limit
Package
Limit
400
300
10 m s
1
100 m s
1 m s
200
0.1
0.01
0.1
V GS = 20 V
Single Pulse
T C = 25 ° C
1
Thermal Limit
10
10 ms
dc
100
1000
100
0
25
50
75
100
125
150
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Bias Safe
Operating Area
http://onsemi.com
6
T J , STARTING JUNCTION TEMPERATURE ( ° C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
相关PDF资料
NTZD3152PT5G MOSFET P-CHAN DUAL 20V SOT-563
NTZD3154NT5G MOSFET N-CHAN DUAL 20V SOT-563
NTZD3155CT2G MOSFET N/P-CH COMPL 20V SOT-563
NTZD3156CT5G MOSFET N/P-CH 20V SOT-563
NTZD5110NT5G MOSFET N-CH DUAL 60V SOT563
NTZS3151PT5G MOSFET P-CH 20V 860MA SOT-563
NV06P00472J-- THERMISTOR NTC DISK 4.7KOHM 5%
NVB25P06T4G MOSFET P-CH 60V 27.5A D2PAK
相关代理商/技术参数
NTZA3DVV2 制造商:Omron Corporation 功能描述:
NTZD3151P 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Efficiency DC-DC Converters
NTZD3152P 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563
NTZD3152PT1G 功能描述:MOSFET -20V -430mA Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTZD3152PT1H 制造商:ON Semiconductor 功能描述:PFET SOT563 20V 430MA 900 - Tape and Reel 制造商:ON Semiconductor 功能描述:PFET SOT563 20V 430MA TR 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述:REEL / PFET SOT563 20V 430MA TR
NTZD3152PT5G 功能描述:MOSFET -20V -430mA Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTZD3152PT5H 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563
NTZD3154N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, 540 mA, Dual N−Channel